Molecular Beam Epitaxy of High Magnesium Content Single-Phase Wurzite MgxZn1-xO Alloys (x≃0.5) and Their Application to Solar-Blind Region Photodetectors
By T. Takagi, Hiroshige Tanaka, S. Fujita, S. Fujita. 2003
147 citations recorded by the source corpus.
Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/8194d57479313b97ebbe03631a1fd33228c1013f
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In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- ZnO-Based Ultraviolet Photodetectors (2010, background): “Solar-blind UV flame detectors are typically based on wide-bandgap semiconductors such as MgZnS [71], AlGaN [72], diamond [73], Ga2O3 [74], LaAlO3 [75] and ZnMgO [76-80].”
- Recent Advances in ZnO-Based Light-Emitting Diodes (2010, methodology): “44 eV) has been reported and used for fabrication of solarblind optical detectors [20], 2-D electron gas MgZnO/ZnO”
- Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO (2004, background): “5 eV in Mg x Zn 1− x O and Zn 1− x Cd x O alloy films with quite small lattice mismatch between the two different composition”