Silicon nanowire radial p-n junction solar cells.
By E. Garnett, Peidong Yang. Journal of the American Chemical Society, 2008
866 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/809b71a45668b5399085a6bc3b873ddd6eb73d37
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In Biomedical Engineering
- Harry A. Atwater
- Mark L. Brongersma
- Xiuling Li
- Yi Cui
- E. Warren
- Nathan S. Lewis
- M. McGehee
- S. Boettcher
In Electrical and Electronic Engineering
- Nathan S. Lewis
- Harry A. Atwater
- Yi Cui
- Mark L. Brongersma
- Xiuling Li
- E. Warren
- S. Boettcher
- R. Briggs
Citations in the corpus
- Nanowire Solar Cells (2011, background): “or by depositing a thin film over the original nanowire (11, 41, 46, 47).”
- III–V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (2011, background): “of the radial p-n junctions in core–multishell (CMS) NWs can make the junction area larger than that of planar substrate with the same surface area [84], [85].”
- Challenges and prospects of nanopillar-based solar cells (2009, background): “Specifically, three main device structures have been proposed and explored, including nanopillar (NPL) arrays with radial [21] [22] (Fig.”
- Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics (2012, positive): “Garnett and Yang [69] have reported Si nanowire radial pn junction solar cells, with single crystal n-Si nanowire core that are 20 lm in height formed by AgNO3 MacEtch and p-type poly Si shell from deposited amorphous Si that was subsequently annealed to poly Si (Fig.”
- Structural and XPS characterization of ALD Al2O3 coated porous silicon (2015, neutral): “Because of its unique physical properties, PSi has a large number of applications in optoelectronics [1,2], biotechnology [3,4], renewable energy [5,6] etc.”
- Si microwire-array solar cells (2010, methodology): “Wire solar cells have been fabricated using c-Si,[26, 44, 61, 62, 63, 64, 65, 66, 67, 68, 69] amorphous-Si,[70] GaAs,[71] III-Nitrides,[72] and InP,[73] via a variety of growth techniques, including VLS growth,[26, 44, 61, 62, 63, 64, 65, 66, 69] metal-catalyzed chemical etching,[67, 70] molecular b”