High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

By J. Faure-Vincent, C. Tiușan, E. Jouguelet, F. Canet, M. Sajieddine, C. Bellouard, E. Popova, M. Hehn, F. Montaigne, A. Schuhl. 2003

163 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/7ea11a9309cc76ff1403532c8ecf4c1c4052685c

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. A. Barthélémy
2. Manuel Bibes

In Condensed Matter Physics

1. Manuel Bibes
2. A. Barthélémy

In Electronic, Optical and Magnetic Materials

1. A. Barthélémy
2. Manuel Bibes
3. J. Scott

Citations in the corpus

• Oxide Spintronics (2007, background): “that have been obtained recently with epitaxial MgO barriers [20]–[24] following theoretical predictions [18], [19].”
• Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, unknown): “Employing a double-barrier structure has also been shown effective in increasing ∆V [76].”