Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

By Min Sup Choi, Gwan‐Hyoung Lee, Young‐Jun Yu, Daeyeong Lee, Seung Hwan Lee, Philip Kim, James C. Hone, Won Jong Yoo. Nature Communications, 2013

705 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7c67378a93890e48b933ad15df434c9edf7a0624

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In Electrical and Electronic Engineering

1. Mark C. Hersam
2. K. Novoselov
3. A. C. Castro Neto
4. T. Marks
5. Lincoln J. Lauhon
6. Vinod K. Sangwan
7. N. M. R. Peres
8. A.K. Geim

In Materials Chemistry

1. Mark C. Hersam
2. K. Novoselov
3. A. C. Castro Neto
4. A. Mishchenko
5. Vinod K. Sangwan
6. T. Marks
7. Deep Jariwala
8. A. Carvalho

Citations in the corpus

• Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, methodology): “An alternative geometry employed h-BN as a tunnel barrier sandwiched between a MoS2 FET and a graphene floating gate (Figure 7c,d).(167) These memory cells outperformed organic semiconductor-based memories in terms of retention time and endurance.”
• 2D materials and van der Waals heterostructures (2016, methodology): “In addition to logic applications, tunneling in van der Waals heterostructures was exploited for memory devices (74) with a floating gate, logic circuits (75), radio-frequency oscillators (72), and resonant tunneling diodes (76).”