Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

By S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, S. Takagi. 2003

254 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7b24d01688440febbc5679a612d29e9cfe60ed74

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In Biomedical Engineering

1. U. Gösele

In Electrical and Electronic Engineering

1. Ryosho Nakane

Citations in the corpus

• Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, methodology): “of Ge before the condensation and, as a result, high-purity, ultrathin, and uniform GOI layers to atomic scale can be fabricated by the present method [109].”
• Heterogeneous Integration of Compound Semiconductors (2010, background): “The formation of a thin Ge layer on Si by Ge condensation is also a possible option (85).”