Electric field effect in correlated oxide systems

By Charles H. Ahn, J. Triscone, Jochen Mannhart. Nature, 2003

604 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7a89727cf41fbac8bb4d20f7ebce533dbc5cd4be

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Manuel Bibes
2. K. Rabe
3. C. Daniel Frisbie
4. N. Nagaosa
5. J. Mannhart
6. M. Dawber
7. M. Di Ventra
8. Andy Thomas

In Electronic, Optical and Magnetic Materials

1. Manuel Bibes
2. A. Barthélémy
3. A. Bhattacharya
4. K. Rabe
5. J. Triscone
6. M. Kawasaki
7. N. Nagaosa
8. M. Dawber

In Materials Chemistry

1. A. Barthélémy
2. K. Rabe
3. Manuel Bibes
4. J. Triscone
5. A. Bhattacharya
6. M. Dawber
7. A. Ohtomo
8. J. Villegas

Citations in the corpus

• Electric field control of the LaAlO3/SrTiO3 interface ground state (2008, background): “To resolve this issue and investigate the phase diagram of the system, electrostatic doping appears to be an ideal technique, because it allows the tuning of the carrier density while preserving the oxygen concentration and disorder landscape [15, 16].”
• Electrostatic modification of novel materials (2006, methodology): “Changes in carrier density of the order of 1012–1013/cm2 can be induced in the channel by a gate before dielectric breakdown occurs in typical dielectrics like SiO2, and densities in excess of 1014/cm2 have been obtained using SrTiO3 and ferroelectrics such as lead zirconate titanate PZT .”
• Emergent phenomena at oxide interfaces. (2012, positive): “The MOSFET structures have been successful in electric-field-control of superconductivity in cuprate ultrathin film”
• Ultrathin oxide films and interfaces for electronics and spintronics (2011, background): “It has been known for several years that the strong sensitivity of transport properties to carrier density in STO makes it possible to use it as an oxide channel in field effect transistors [332] (for review on electrostating doping in oxides, the reader may consult [333,334]).”
• Modern Physics of Ferroelectrics: Essential Background (2007, background): “The ferroelectric field effect can also be used to modify the properties of more exotic systems, particularly superconducting or magnetic oxides [ 92 ].”
• Electric-field-induced superconductivity in an insulator. (2008, background): “However, such experiments have so far been limited to modulation of the critical temperature in originally conducting samples because of dielectric breakdow”