Effects of carrier concentration on the dielectric function of ZnO:Ga and In 2 O 3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

By H. Fujiwara, M. Kondo. 2005

440 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7a80cf00bb145896baf3be7ff8f0ddf1a9d7fe50

How researchers see this paper

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In Electrical and Electronic Engineering

1. S. De Wolf
2. Christophe Ballif
3. Z. Holman
4. A. Descoeudres
5. L. Barraud

In Materials Chemistry

1. S. De Wolf
2. Christophe Ballif
3. Z. Holman
4. A. Descoeudres
5. L. Barraud

Citations in the corpus

• Current Losses at the Front of Silicon Heterojunction Solar Cells (2012, background): “5(a), bandgap absorption is observed below 450 nm and is pushed to lower wavelengths for higher ne due to filling of states in the bottom of the conduction band (Burstein-Moss effect) [15], [18]–[20].”