High-temperature quenching of electrical resistance in graphene interconnects

By Q. Shao, Guanxiong Liu, D. Teweldebrhan, Alexander A. Balandin. 2008

242 citations recorded by the source corpus.

Subfields: Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/79b215f7dea904edbce4cac4d3425ed7e3a3b8bd

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Materials Chemistry

1. Hong Li
2. Kaustav Banerjee
3. Chuan Xu
4. L. Hultman
5. Yinxiao Yang
6. James D. Meindl
7. T. Iakimov
8. R. Murali

Citations in the corpus

• Resistivity of Graphene Nanoribbon Interconnects (2009, background): “For interconnect applications, graphene has shown interesting properties in terms of its temperature coefficient [4] and”
• Epitaxially grown graphene based gas sensors for ultra sensitive NO2 detection (2011, background): “resistivity was shown to drastically reduce upon heating from 300-500 K [17] with the results obtained for single layer graphene in good agreement with theory [18].”
• Modeling, Analysis, and Design of Graphene Nano-Ribbon Interconnects (2009, background): “Hence, while various fabrication methods of GNRs are being pursued [2], [5], [22], [31]–[33], there is a critical need to evaluate the applicability of GNRs as very large scale integration (VLSI) interconnects and evaluate their performance in comparison to traditional metals (Cu and W) and CNTs.”