A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

By P. Zomer, S. Dash, N. Tombros, Van Wees. 2011

378 citations recorded by the source corpus.

We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm2 V−1 s−1 at room temperature and 275 000 cm2 V−1 s−1 at 4.2 K. The excellent quality is supported by the early development of the ν = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4.2 K. We also present a fast, simple, and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/791d186416d112937e534868f1d3e71c2fe90701

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In Atomic and Molecular Physics, and Optics

  1. Takashi Taniguchi
  2. Kenji Watanabe
  3. Feng Wang
  4. A. Castellanos-Gómez
  5. G. Steele
  6. Vibhor Singh
  7. A. C. Castro Neto
  8. G. Eda

In Materials Chemistry

  1. A. Castellanos-Gómez
  2. Takashi Taniguchi
  3. Kenji Watanabe
  4. Herre S. J. van der Zant
  5. G. Steele
  6. Feng Wang
  7. M. Buscema
  8. A. C. Castro Neto

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