An innovative way of etching MoS2: Characterization and mechanistic investigation
By Yuan Huang, Jing Wu, Xiangfan Xu, Y. Ho, G. Ni, Q. Zou, G. Koon, Weijie Zhao, A. C. Castro Neto, G. Eda and 2 more. Nano Reseach, 2013
151 citations recorded by the source corpus.
We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.Graphical abstract
Subfields: Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/29ab73e507c85890a1cce96e8cbe66659ca0af17
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Citations in the corpus
- Transition-metal doped edge sites in vertically aligned MoS2 catalysts for enhanced hydrogen evolution (2015, background): “Pristine MoS2 in Figure 4A has three distinct vibration modes located at 287, 381, and 409 cm-1, corresponding to the E1g, E2g1, and A1g first-order phonon modes of MoS2 at the Γ point of the Brillouin zone respectively (Figure 4B).[17, 22, 36-40].”