Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress

By Po-Tsun Liu, Yi‐Teh Chou, Li‐Feng Teng. 2009

215 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/786ee490cfe60e457047ecf2dede5f9be56fea9b

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In Electrical and Electronic Engineering

1. John F. Conley

Citations in the corpus

• The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs (2011, unknown): “inside a-IGZO [19], [20] and/or negatively charged trapped electrons near the Al2O3/a-IGZO interface [21], [22].”
• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “[38] found out that the stability of 50-nm RF-magnetron-sputtered IZO coplanar bottom gate TFTs with 300-nm Si3N4 gate dielectrics is degraded (larger VT shifts) when low-field positive and negative bias stressings are conducted in ambient rather than in vacuum.”