GaS and GaSe Ultrathin Layer Transistors
By D. Late, Bin Liu, Jiajun Luo, A. Yan, H. Matte, M. Grayson, C. Rao, V. Dravid. Advances in Materials, 2012
628 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/52088027eca13e545e6602bd437cf0173179d8f6
How researchers see this paper
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In Electrical and Electronic Engineering
In Materials Chemistry
- Kristian Sommer Thygesen
- T. Olsen
- PingAn Hu
- Karsten Wedel Jacobsen
- Kai Xiao
- P. Tan
- Debdeep Jena
- N. Ma
Citations in the corpus
- Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap (2014, positive): “Our devices therefore show higher carrier mobilities than monolayer MoS2 or GaSe on similar SiO2/Si substrates [32, 33].”
- Electronic structure, optical properties, and lattice dynamics in atomically thin indium selenide flakes (2014, background): “[35] Late, D.”