Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment

By Jin-seong Park, Jae Kyeong Jeong, Y. Mo, Hyedong Kim, Sunil Kim. 2007

364 citations recorded by the source corpus.

The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The net electron carrier concentration (1020–1021cm−3) of the a-IGZO thin films dramatically increased upon their exposure to the Ar plasma compared to that (1014cm−3) of the as-deposited thin film. The authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IGZO (channel) by using the Ar plasma treatment. Without the treatment, the a-IGZO thin film transistors (TFTs) with W∕L=50∕4μm exhibited a moderate field-effect mobility (μFE) of 3.3cm2∕Vs, subthreshold gate swing (S) of 0.25V∕decade, and Ion∕off ratio of 4×107. The device performance of the a-IGZO TFTs was significantly improved by the Ar plasma treatment. As a result, an excellent S value of 0.19V∕decade and high Ion∕off ratio of 1×108, as well as a high μFE of 9.1cm2∕Vs, were achieved for the treated a-IGZO TFTs.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/774507be7a80be368264a46c0dbf50a9e45b6df7

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In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, background): “On the other hand, new approaches that utilize this drawback to developing low-resistance contacts and homojunction/self-aligned TFTs have been proposed [24]–[27].”