Bound magnetic polaron interactions in insulating doped diluted magnetic semiconductors
By A. Durst, R. N. Bhatt, P. Wolff. 2001
241 citations recorded by the source corpus.
The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS's) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has heen developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS's.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/76c95e36315a2aafcd7b046eb5f12c48f746355e
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In Condensed Matter Physics
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In Materials Chemistry
Citations in the corpus
- Donor impurity band exchange in dilute ferromagnetic oxides (2005, background): “The donors tend to form bound magnetic polarons, coupling the 3 d moments of the ions within their orbit”
- Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, background): “497 , 498 An electron associated with a donor defect (oxygen vacancy for example) is confined in a hydrogenic orbital of radius r H = ϵ( m / m *) a 0 , where ϵ is the high-frequency dielectric constant, m is the electron mass, m * is the effective mass of the donor electrons,”
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “Other related models assume that the Mn acceptors are strongly compensated so that the density of localized holes is much smaller than the density of Mn ions, leading to a polaronic picture in which a single hole polarizes a cloud of Mn spins (Durst et al., 2002; Kaminski and Das Sarma, 2002).”