Quantum dot lasers
By D. Bimberg, N. N. Ledentsov, R. Sellin, C. Ribbat, N. Mão, M. Grundmann, V. Ustinov, A. Zhukov, A. R. Kovsh, Z. Alferov and 1 more. LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080), 2003
213 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/759feb06cd8da83ba9557eb25cc58236a40d05ea
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In Electrical and Electronic Engineering
Citations in the corpus
- Silicon Photonic Biosensors Using Label-Free Detection (2018, background): “Thanks to the tight electron confinement, thus increasing the optical gain dependence on the current density, which reduces the transparency current and makes the threshold current density temperature insensitive [254].”
- High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents (2005, background): “3 m at RT [1].”