An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

By T. Akiyama, M. Ekawa, M. Sugawara, K. Kawaguchi, H. Sudo, A. Kuramata, H. Ebe, Yasuhiko Arakawa. IEEE Photonics Technology Letters, 2005

197 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/759c019eee7c5f3b8490755cfdba1666ebee0bf6

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In Electrical and Electronic Engineering

1. M. G. Thompson
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Citations in the corpus

• InGaAs Quantum-Dot Mode-Locked Laser Diodes (2009, background): “ideal properties for a mode-locking saturable absorber [21], [22], while the high saturation energy of the gain section [23] facilitates the formation of high peak power pulses.”
• Recent progress and novel applications of photonic crystal fibers (2010, background): “Semiconductor nanocrystals or quantum dots [70] have been attracting a lot of attention in the last few years, because they are expected to realize high-performance optical devices, for example cross-talk free semiconductor optical amplifiers [152].”