Theory of defects in semiconductors

By David Alan Drabold, S. Estreicher. 2007

147 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7437ce3141b3baa466a52781d8de174e4470bf62

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Ilja Makkonen
2. Moran Wang
3. Christoph Freysoldt
4. C. G. Van de Walle
5. Jörg Neugebauer
6. F. Tuomisto

In Condensed Matter Physics

1. C. G. Van de Walle
2. Ilja Makkonen
3. Christoph Freysoldt
4. Jörg Neugebauer
5. F. Tuomisto

In Materials Chemistry

1. C. G. Van de Walle
2. Ilja Makkonen
3. Moran Wang
4. Christoph Freysoldt
5. Jörg Neugebauer
6. Ning Pan
7. F. Tuomisto
8. J. L. Lyons

Citations in the corpus

• Electrostatic interactions between charged defects in supercells (2011, methodology): “The advent of density-functional theory (DFT), and, more recently, ab initio approaches beyond it such as many-body perturbation theory in the GW approximation [3] or quantum Monte-Carlo methods [4], has enabled us to study the microscopic details of point defects with almost no a priori assumptions”
• Predictions of effective physical properties of complex multiphase materials (2008, background): “the non-equilibrium behaviors of the materials are of concern and interest, and have necessitated the different methodologies in tackling such problems, including transient behavior studies [312,333], non-equilibrium analysis [334], material viscoelasticity, time dependent behaviors, and system rheo”
• Tutorial: Defects in semiconductors—Combining experiment and theory (2016, unknown): “10,11 Books that cover experimental aspects include Lannoo and Bourgoin, 12 Pantelides, 13 Stavola, 14 Spaeth and Overhof, 15 and McCluskey and Haller.”
• Defect identification in semiconductors with positron annihilation: Experiment and theory (2013, methodology): “…large supercells (up to 1000 atoms) of the formation enthalpies and charge transition levels of point defects with these methods [for reviews, see Van deWalle and Neugebauer (2004), Drabold and Estreicher (2007), Janotti and Van de Walle (2009), and Van de Walle, Lyons, and Janotti, (2010)].”
• Native Point Defects in ZnO (2014, background): “The wave functions and charge density are expanded in terms of Gaussian orbitals and plane-waves, respectively[16].”