Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

By A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, Hideo Hosono. 2005

461 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7415196879cae4ffdb4d09124d8cd6ad8e3b0490

Citations in the corpus

• Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model (2009, unknown): “Considering the above discussion, we propose that the percolation conduction is more appropriate to explain the carrier transport properties observed in IGZO [21], [ 22 ]; however, no quantitative discussion has been given to support it.”