Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
By A. Descoeudres, L. Barraud, S. De Wolf, B. Strahm, D. Lachenal, C. Guerin, Z. Holman, F. Zicarelli, B. Demaurex, J. Seif and 2 more. 2011
264 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/723e8306d26884041f77dd5204cdc40f8b1d1afc
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- >21% Efficient Silicon Heterojunction Solar Cells on n- and p-Type Wafers Compared (2013, background): “Thanks to well-controlled wafer cleaning and to high-quality passivating a-Si:H layers [30], [31], Vocs on n-type wafers are similar on FZ and CZ materials.”
- Current Losses at the Front of Silicon Heterojunction Solar Cells (2012, background): “on individual samples with varying layer thicknesses was required) [5].”
- Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells (2013, unknown): “6 and the large difference in efficiencies reflects improvements in layers of the solar cell besides the front TCO, including the a-Si:H layers [7,16].”