Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers

By P. Borri, Wolfgang W. Langbein, J. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg. IEEE Photonics Technology Letters, 2000

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Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices (2001, methodology): “mined from the information supplied about the device [4], [9].”
Theory of pulse-train amplification without patterning effects in quantum-dot semiconductor optical amplifiers (2004, background): “As mentioned earlier, QD carrier relaxation times ranging from hundreds of femtoseconds to tens of picoseconds have been experimentally observed [4], [5], [7], [13]–[18].”
Saturation and noise properties of quantum-dot optical amplifiers (2004, methodology): “The capture and relaxation factors , and have been estimated from [17] and results in a maximum relaxation time of 150 fs and a maximum capture time of 2 ps under full inversion of the WL bandedge.”
A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses (2009, background): “Future research will explore the potential of more complex nanostructures to generate sub-100-fs pulses at relatively low repetition rates, for example, making use of the fast carrier cooling that has been experimentally observed in self-assembled quantum-dot structure”