Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices
By T. W. Berg, Svend Bischoff, I. Magnúsdóttir, Jesper Mørk. IEEE Photonics Technology Letters, 2001
244 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/1c3c76bd59579626ed1b55bfcfca3fee96d4b1b4
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Theory of pulse-train amplification without patterning effects in quantum-dot semiconductor optical amplifiers (2004, background): “In the case of QDs, it is fulfilled, in particular, if the QD has only one electron and hole level, and the electron and hole masses and the binding energies of the levels relative to the wetting layer (WL) are identical (for examples of actual QD structures used in SOAs, see [6], [8], and [19]).”
- InP based lasers and optical amplifiers with wire-/dot-like active regions (2005, background): “A major interest in QD/dash material in the telecom wavelength range is the expected high speed properties based on the much faster gain recovery in comparison with quantum well or bulk amplifiers [60–62].”