Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3 Passivation Layer

By K. Hirama, H. Sato, Y. Harada, Hideki Yamamoto, M. Kasu. 2012

175 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7144a8671e4b1b325f0d72e237de8fba3f819018

Citations in the corpus

• Diamond power devices: state of the art, modelling, figures of merit and future perspective (2019, unknown): “2 A mm−1 at T = 300 K with VGS = −5V and VDS = −1 V [164] <10 mA mm−1 for VDS = −1 V and VGS = −5 V [161]”
• Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs (2020, unknown): “high performance diamond MOSFETs [232]–[234].”