Dissipationless Quantum Spin Current at Room Temperature

By Shuichi Murakami, N. Nagaosa, Shoucheng Zhang. Science, 2003

1,406 citations recorded by the source corpus.

Although microscopic laws of physics are invariant under the reversal of the arrow of time, the transport of energy and information in most devices is an irreversible process. It is this irreversibility that leads to intrinsic dissipations in electronic devices and limits the possibility of quantum computation. We theoretically predict that the electric field can induce a substantial amount of dissipationless quantum spin current at room temperature, in hole-doped semiconductors such as Si, Ge, and GaAs. On the basis of a generalization of the quantum Hall effect, the predicted effect leads to efficient spin injection without the need for metallic ferromagnets. Principles found here could enable quantum spintronic devices with integrated information processing and storage units, operating with low power consumption and performing reversible quantum computation.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6f33b329fecb27cedc42c7bc9bb218f91eaeec0a

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In Atomic and Molecular Physics, and Optics

1. K. Bliokh
2. J. Sinova
3. T. Jungwirth
4. Pietro Gambardella
5. A. Manchon
6. Franco Nori
7. Di Xiao
8. Q. Niu

In Electrical and Electronic Engineering

1. J. Sinova
2. T. Jungwirth
3. A. Manchon
4. Allan H. MacDonald
5. K. Bliokh
6. S. H. Mousavi
7. G. Shvets
8. Di Xiao

Citations in the corpus

• Berry phase effects on electronic properties (2009, background): “This is the source of the intrinsic spin Hall effect (SHE) in semiconductors predicted by Murakami et al. (2003).”
• Polariton polarization-sensitive phenomena in planar semiconductor microcavities (2009, background): “The effect can occur due to the spin-dependent scattering of electrons by charged impurities or other defects (Awschalom et al 2002), or due to spin– orbit effects on the carrier energy dispersion (Hirsch 1999, Murakami et al 2003).”
• Geometrodynamics of spinning light (2008, methodology): “Hence, ~ V 1⁄4 const, and equations (6) and (7) can readily be integrated (see Supplementary Information).”
• Observation of the spin-Seebeck effect in a ferromagnetic semiconductor. (2010, background): “Spin transport in semiconductors might also lead to dissipation-less information transfer with pure spin current”
• Torsional anomalies, Hall viscosity, and bulk-boundary correspondence in topological states (2012, background): “Hamiltonian (which represents, for example, topological insulators) [18, 19] and the Luttinger Hamiltonian (which represents, for example, the upper-most valence bands of III-V semiconductors) [20, 21]:”
• Spintronics: Fundamentals and applications (2004, neutral): “Using an analogy with the quantum Hall effect, it has been suggested that the spin-orbit interaction could lead to dissipationless spin currents in hole-doped semiconductors (Murakami et al., 2003).”