Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications

By Y. Tomm, J. Ko, Akira Yoshikawa, T. Fukuda. 2001

159 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry, Renewable Energy, Sustainability and the Environment

View Paper: https://www.semanticscholar.org/paper/6f267b88f28b219ac66fa34a95a83cffd4d1444e

Citations in the corpus

• Growth and characterization of α-, β-, and ϵ-phases of Ga2O3 using MOCVD and HVPE techniques (2018, unknown): “edu floating-zone (FZ) [7–10], edge-defined film-fed growth (EFG) [11], and Czochralski (CZ) [12,13] methods.”