Density of States of a-InGaZnO From Temperature-Dependent Field-Effect Studies

By C. Chen, K. Abe, H. Kumomi, J. Kanicki. IEEE Transactions on Electron Devices, 2009

167 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/6c90c5b306a42e75e4426dca3612d02816070b73

How researchers see this paper

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1. Sungwook Park
2. Y. Jeon
3. Sangwon Lee
4. Sungchul Kim
5. D. M. Kim
6. Jun‐Hyun Park
7. Dae Hwan Kim
8. K. Jeon

Citations in the corpus

• Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors by Using Multifrequency Capacitance–Voltage Characteristics (2010, methodology): “reported a DOS-extraction technique based on the Meyer–Neldel rule of the activation energy (Ea) [5].”