Application of HfSiON as a gate dielectric material

By M. Visokay, J. J. Chambers, A. Rotondaro, A. Shanware, Luigi Pietro Maria Colombo. 2002

373 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/6c6a2eae2119a01e70d30482dac1a0b1b1700a2b

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Citations in the corpus

• Review on high-k dielectrics reliability issues (2005, background): “1) Hafnium Silicate Integration: Among the candidates to replace SiO -based dielectrics, it is reported that nitrided silicate hafnium is also a promising material [ 18 ].”