Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements
By I. Friedrich, V. Weidenhof, W. Njoroge, P. Franz, Matthias Wuttig. 2000
654 citations recorded by the source corpus.
Subfields: Ceramics and Composites, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6c6637ed0f8b3ea47234f3dd43a7d22af001be36
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In Ceramics and Composites
In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Phase-change materials for rewriteable data storage. (2007, background): “Even in many of the studies performed up to now on thin films, strong evidence for heterogeneous nucleation is foun”
- Phase Change Materials (2009, background): “It is formed at approximately 310◦C (23) and is supposedly not present in optical discs (24) but is probably present in PCRAM devices because the back-end-of-the-line fabrication process includes heating the wafers to 400◦C for 30 min.”