Novel ZrInZnO Thin‐film Transistor with Excellent Stability
By Jin-seong Park, Kwang-Suk Kim, Yongchan Park, Y. Mo, Hyedong Kim, Jae Kyeong Jeong. 2009
253 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/6c4fa21d1e2a41544586ebd85e4f63d1f5748d31
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In Electrical and Electronic Engineering
In Materials Chemistry
Citations in the corpus
- Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “reported a novel InZrZnO TFT where the Zr had incorporated as a carrier and oxygen vacancy formation suppressor.(54) They postulated that Zr cations act as carrier suppressors.”
- Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping* (2009, background): “Now the main research focus is to find a way to attain improved long-term stability [16]–[20]; it is thought that sensitivity to adsorption and desorption of oxygen-, hydrogen- and water-related molecules and plasma treatment [21]–[23] are a drawback of AOS.”
- Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy (2011, background): “, how V̈O affects the reliability for optimizing the deposition process of the TFT, because the developing of other high-stability materials such as ZrInZnO [7] or HfInZnO [8] TFTs will not only increase the manufacture cost but also lose the virtues of a-IGZO.”