High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

By J. Isberg, J. Hammersberg, E. Johansson, T. Wikström, Daniel J. Twitchen, A. Whitehead, S. Coe, G. Scarsbrook. Science, 2002

1,182 citations recorded by the source corpus.

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

Surface transfer doping of semiconductors (2009, background): “Despite its high electron and hole mobilities (le 4500 cm V 1 s , lh 3800 cm V 1 s 1 for intrinsic single crystal CVD diamond) [15], undoped diamond is considered a perfect electrical insulator.”
Recent advances in diamond power semiconductor devices (2018, methodology): “Diamond has a high carrier mobility (4500 and 3800 cm(2)/Vs for electron and holes, respectively) [1], a high breakdown field (> 10 MV/cm) [2], a low dielectric constant (5.”
Electrochemical technologies in wastewater treatment (2004, background): “A recent finding from Sweden shows that pure diamond can be a very good conductor of electrons [183].”
Schottky-quantum dot photovoltaics for efficient infrared power conversion (2008, methodology): “87 The total charge extracted in the time-of-flight measurements was less than 10% of the capacitive charge (determined using a parallel-plate model) to ensure that the electric field was not distorted; in the high injection regime, analysis of the time-of-flight transient signals becomes significan”
Ultralong spin coherence time in isotopically engineered diamond. (2009, methodology): “Homoepitaxial CVD diamond layers were deposited onto specially prepared 〈100〉 -oriented diamond substrate”