Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

By Jungbae Kim, C. Fuentes-Hernandez, William J. Potscavage, Xiaohong Zhang, Bernard Kippelen. 2009

142 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/6be2114dbac811a03db8a4060e6e060b97a300df

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jae Kyeong Jeong
2. Y. Mo
3. Jang Yeon Kwon
4. Hideo Hosono
5. T. Kamiya

In Materials Chemistry

1. Jae Kyeong Jeong
2. Y. Mo

Citations in the corpus

• Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics (2010, background): “[8] J. B. Kim, C. Fuentes-Hernandez, W. J. Potscavage, X.-H. Zhang, and B. Kippelen, “Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition,” Appl.”
• The Effects of Mechanical Bending and Illumination on the Performance of Flexible IGZO TFTs (2011, methodology): “Next, TFT islands were patterned and etched using standard photolithography (mask 2) and HCl:DI water of 1:120 [9].”