Covalent bonding and the nature of band gaps in some half-Heusler compounds

By Hem Chandra Kandpal, Claudia Felser, R. Seshadri. 2005

250 citations recorded by the source corpus.

Half-Heusler compounds XYZ, also called semi-Heusler compounds, crystallize in the C1b MgAgAs structure, in the space group . We report a systematic examination of band gaps and the nature (covalent or ionic) of bonding in semiconducting 8- and 18-electron half-Heusler compounds through first-principles density functional calculations. We find that the most appropriate description of these compounds from the viewpoint of electronic structures is one of a YZ zinc blende lattice stuffed by the X ion. Simple valence rules are obeyed for bonding in the 8-electron compound. For example, LiMgN can be written Li+ + (MgN)− and (MgN)−, which is isoelectronic with (SiSi), forms a zinc blende lattice. The 18-electron compounds can similarly be considered as obeying valence rules. A semiconductor such as TiCoSb can be written Ti4+ + (CoSb)4−; the latter unit is isoelectronic and isostructural with zinc-blende GaSb. For both the 8- and the 18-electron compounds, when X is fixed as some electropositive cation, the computed band gap varies approximately as the difference in Pauling electronegativities of Y and Z. What is particularly exciting is that this simple idea of a covalently bonded YZ lattice can also be extended to the very important magnetic half-Heusler phases; we describe these as valence compounds, i.e. possessing a band gap at the Fermi energy albeit only in one spin direction. The local moment in these magnetic compounds resides on the X site.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/69eef46b6f03398e7af66eec640c7d13eb779d54

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In Electronic, Optical and Magnetic Materials

  1. Claudia Felser
  2. G. Fecher
  3. J. Kübler
  4. S. Chadov
  5. Ting Zhu
  6. C. Fu
  7. Ashvin Vishwanath
  8. N. P. Armitage

In Materials Chemistry

  1. Claudia Felser
  2. Ashvin Vishwanath
  3. Xiao-Liang Qi
  4. Shoucheng Zhang
  5. N. P. Armitage
  6. E. Mele
  7. S. Chadov
  8. G. Fecher

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