Tunable multifunctional topological insulators in ternary Heusler compounds.

By S. Chadov, Xiao-Liang Qi, J. Kübler, G. Fecher, Claudia Felser, Shoucheng Zhang. 2010

761 citations recorded by the source corpus.

Recently the quantum spin Hall effect was theoretically predicted and experimentally realized in quantum wells based on the binary semiconductor HgTe (refs 1-3). The quantum spin Hall state and topological insulators are new states of quantum matter interesting for both fundamental condensed-matter physics and material science. Many Heusler compounds with C1(b) structure are ternary semiconductors that are structurally and electronically related to the binary semiconductors. The diversity of Heusler materials opens wide possibilities for tuning the bandgap and setting the desired band inversion by choosing compounds with appropriate hybridization strength (by the lattice parameter) and magnitude of spin-orbit coupling (by the atomic charge). Based on first-principle calculations we demonstrate that around 50 Heusler compounds show band inversion similar to that of HgTe. The topological state in these zero-gap semiconductors can be created by applying strain or by designing an appropriate quantum-well structure, similar to the case of HgTe. Many of these ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the rare-earth element Ln, which can realize additional properties ranging from superconductivity (for example LaPtBi; ref. 12) to magnetism (for example GdPtBi; ref. 13) and heavy fermion behaviour (for example YbPtBi; ref. 14). These properties can open new research directions in realizing the quantized anomalous Hall effect and topological superconductors.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. Ashvin Vishwanath
  2. Claudia Felser
  3. Hsin Lin
  4. Arun Bansil
  5. Tanmoy Das
  6. N. P. Armitage
  7. E. Mele
  8. J. Venderbos

In Electronic, Optical and Magnetic Materials

  1. Stuart S. P. Parkin
  2. T. Graf
  3. Claudia Felser
  4. Lukas Wollmann
  5. A. Nayak
  6. Ashvin Vishwanath
  7. N. P. Armitage
  8. E. Mele

In Materials Chemistry

  1. Stefano Curtarolo
  2. Ashvin Vishwanath
  3. Claudia Felser
  4. Hsin Lin
  5. Arun Bansil
  6. N. P. Armitage
  7. Natalio Mingo
  8. Tanmoy Das

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