Effects of nitridation in gate oxides grown on 4H-SiC
By P. Jamet, Sima Dimitrijev, P. Tanner. 2001
269 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/69ebeb7f14dcbc721e5ea1afe3e3562fb01c945f
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In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Silica on Silicon Carbide (2008, background): “Thirdly, the chemistry of SiC/N/SiO 2 interfaces is quite complex with observed Si-N and Si-N-O bonds 347 and possible C-N bonds.”