Photosensor Device Based on Few‐Layered WS2 Films

By N. Peréa-López, A. Elías, A. Berkdemir, A. Castro-Beltrán, H. Gutiérrez, S. Feng, R. Lv, T. Hayashi, F. López‐Urías, Sujoy Ghosh and 4 more. 2013

590 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/678078c5a1930a88bd32e3e70439646234d7b1d3

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Mark C. Hersam
2. Lincoln J. Lauhon
3. Yi Cui
4. Weida Hu
5. Feng Miao
6. Zhenhua Ni
7. Kenji Watanabe
8. Takashi Taniguchi

In Materials Chemistry

1. Takashi Taniguchi
2. Kenji Watanabe
3. Mark C. Hersam
4. Zhenhua Ni
5. Vinod K. Sangwan
6. T. Marks
7. Deep Jariwala
8. Yi Cui

Citations in the corpus

• High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection (2015, background): “Many studies of phototransistors have focused on monolayer Mo- and W-based transition metal dichalcogenides([3,4,8,10-12]) with direct bandgaps([1,13]).”
• Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. (2014, background): “grown few-layer WS2.(190) Wavelength-dependent studies later suggested that the photocurrent roughly follows the absorption spectrum, which led to speculation of interband absorption and”