Quantum Dot Heterostructures
By J. Rorison. 2000
457 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/64d025767272135339c4b20f7c7ba9760ebc08c9
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In Atomic and Molecular Physics, and Optics
In Materials Chemistry
Citations in the corpus
- Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers (2000, background): “Some of the most important issues of QD lasers relates to their dynamic behavior, which is conjectured to be limited by the carrier capture into and relaxation in the QD’s [1], [3].”
- Quantum-dot infrared photodetectors: Status and outlook (2008, unknown): “Zero-dimensional quantum confined semiconductor heterostructures have been investigated theoretically and experimentally for some time [2–4].”
- Quantum dot Rabi rotations beyond the weak exciton–phonon coupling regime (2010, background): “Spatial confinement of charge carriers gives rise to an atomic-like discrete energy level structure within the dot region [1, 2, 3], which allows for the selective probing of particular excitonic (electronhole pair) transitions [4, 5].”
- Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers (2000, background): “In(Ga)As–GaAs QD lasers both with molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been recently achieved [1].”