Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

By Yan Tang, K. Shinohara, D. Regan, A. Corrion, David F. Brown, J. Wong, A. Schmitz, H. Fung, S. Kim, M. Micovic. IEEE Electron Device Letters, 2015

134 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/049c3212f9b7307634d858bf6f2276b9f6ce2ea6