The Galactic WN stars. Spectral analyses with line-blanketed model atmospheres versus stellar evolut

By W. Hamann, G. Gräfener, A. Liermann. 2006

257 citations recorded by the source corpus.

An infrared light-receiving device includes an optical absorption layer disposed on a principal surface of a substrate and an optical filter disposed on the optical absorption layer, the optical filter including first, second, and third semiconductor regions that are arranged in that order in a direction from the optical absorption layer to the optical filter, each of the first, second, and third semiconductor regions including an n-type InGaAs layer. The optical absorption layer includes a type-II superlattice structure. The first semiconductor region contains an n-type impurity with a concentration of 2.0×1019 cm−3 or more. The third semiconductor region contains an n-type impurity with a concentration of 3.0×1018 cm−3 or less and 8.0×1017 cm−3 or more. The second semiconductor region contains an n-type impurity with a concentration between the impurity concentration of the first semiconductor region and the impurity concentration of the third semiconductor region.

Subfields: Astronomy and Astrophysics, Instrumentation

View Paper: https://www.semanticscholar.org/paper/613314bc7e69bc498d5e19dc7b3de434f478211c

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In Astronomy and Astrophysics

  1. S. Smartt
  2. N. Smith
  3. A. Filippenko
  4. G. Meynet
  5. S. Ekström
  6. J. Silverman
  7. Ryan Chornock
  8. Weidong Li

In Instrumentation

  1. N. Smith
  2. S. Smartt
  3. G. Meynet
  4. C. Conroy
  5. R. Hirschi
  6. S. Ekström
  7. A. Filippenko
  8. J. Silverman

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