Silicon carbide power device development for industrial markets

By J. Palmour. 2014 IEEE International Electron Devices Meeting, 2014

152 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/61205cbd18f9b2f854186a4599318a31cdafafe8

How researchers see this paper

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In Electrical and Electronic Engineering

1. I. Husain
2. Zheyu Zhang
3. Burak Ozpineci
4. Emre Gurpinar
5. Fei Wang
6. Wensong Yu

Citations in the corpus

• Electric Drive Technology Trends, Challenges, and Opportunities for Future Electric Vehicles (2021, background): “5, and 10 kV, is not yet commercially available from multiple suppliers due to market challenges but are presented as promising solutions for high-voltage systems [19].”
• Review of Silicon Carbide Power Devices and Their Applications (2017, unknown): “1 in comparison with Si [3]–[5].”
• Overview of Silicon Carbide Technology: Device, Converter, System, and Application (2016, background): “Currently, 150 mm or 6 inch SiC wafers are commercially available [53].”