GeSn p-i-n detectors integrated on Si with up to 4% Sn
By M. Oehme, M. Schmid, M. Kaschel, M. Gollhofer, D. Widmann, E. Kasper, J. Schulze. 2012
182 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/60ae7d2c1f59381eba2c1a01c1e6e697a3769c03
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019, background): “3 development is shown in Table I.(13-40) To fully understand the potential of GeSn detectors, a comprehensive study regarding Sn-compositional device performance, particular with higher Sn composition (higher than 10%), is highly desirable.”