GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

By C. H. Chen, Shoou-Jinn Chang, Yan-Kuin Su, G. Chi, Jim-Yong Chi, C. A. Chang, J. Sheu, J. F. Chen. IEEE Photonics Technology Letters, 2001

140 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/60949e09bc9bb209bdd28e33b165a855e57e59f2

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. Shoou Jinn Chang
2. T. Wen

Citations in the corpus

• Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes (2002, background): “barrier is partially attributed to a higher carrier concentration in the well layers due to Si-doping [15]–[21].”
• InGaN-GaN multiquantum-well blue and green light-emitting diodes (2002, background): “Such an observation suggests some degradation had occurred in the 16-pair blue MQW LED [6], [8].”