Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes
By L. W. Wu, Shoou Jinn Chang, T. Wen, Yan Kuin Su, Jone F. Chen, W. Lai, C. Kuo, C. H. Chen, J. Sheu. 2002
155 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b0c29171ab12cbe97d8dcef27ad82c04c59400e8
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- Suk Choi
- J. Ryou
- P. D. Yoder
- H. Kim
- Jianping Liu
- Z. Lochner
- Hyunsoo Kim
- Russell D. Dupuis
Citations in the corpus
- Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “reported improvement in both the electrical and optical properties in blue LEDs by Si doping with n = 3 × 1017 cm−3 in the QWBs [82].”