Electron tunneling through ultrathin boron nitride crystalline barriers.

By L. Britnell, R. Gorbachev, R. Jalil, B. Belle, F. Schedin, M. Katsnelson, L. Eaves, S. Morozov, Alexander S. Mayorov, N. M. R. Peres and 5 more. Nano letters (Print), 2012

732 citations recorded by the source corpus.

We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5d476b33afd9974a87db4280d1e8e87c3e2121f8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Novel effects of strains in graphene and other two dimensional materials (2015, background): “IV A), and yet another cutting-edge examples are heterostructures, with graphene as one of their building blocks.[36, 101]”
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters (2012, unknown): “It is particularly important to note that this current density is about 3–5 orders of magnitude larger than the recently reported vertical tunneling transistors 20,21 and barristor 22 at the same source-drain bias.”
Resonant tunnelling and negative differential conductance in graphene transistors (2013, methodology): “ntial applications in high-speed electronics. Methods Device fabrication The methods used for fabricating this type of the device are given in references [12] (and its supporting online material) and [13]. Measurement The device characteristics were measured using conventional electrical and cryogen”
Innovation and discovery of graphene‐like materials via density‐functional theory computations (2015, background): “nanosheets serve as excellent dielectric layers for graphene-based electronics.(33,34) Compared with the medium band gap desired for most semiconductor industries, thewide-band gap constitutes a severe obstacle for applying h-BN to electronic and optoelectronic devices.”