Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

By D. Neumayer, Eduard A. Cartier. 2001

419 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/5c11ba4af88c4ffdd69b07601dd85d4d0434f544

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In Electrical and Electronic Engineering

1. Ya. I. Alivov
2. Hadis Morkoç
3. Natalia Izyumskaya

In Materials Chemistry

1. Hadis Morkoç
2. Ya. I. Alivov
3. Natalia Izyumskaya

Citations in the corpus

• Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics (2009, background): “162 In addition, a 5–10 A layer of SiO 2 is formed at the interface, which eliminates in part the benefits to be gained from high-κ dielectric.”