Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

By B. Kim, Y. Lee, B. Chae, S. Yun, S. Oh, Youngmin Lim, Hyun-Tak Kim. 2006

203 citations recorded by the source corpus.

For VO2-based two-terminal devices, the first-order metal-insulator transition (MIT, jump) is controlled by an applied voltage and temperature, and an intermediate monoclinic metal phase between the MIT and the structural phase transition (SPT) is observed. The conductivity of this phase linearly increases with increasing temperature up to TSPT≈68°C and becomes maximum at TSPT. Optical microscopic observation reveals the absence of a local current path in the metal phase. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor where the applied voltage is controlled by a program.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/58534cf37bfbcd9362782ac6b09815c6c646e34e

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In Electrical and Electronic Engineering

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

In Polymers and Plastics

1. C. Ko
2. Zheng Yang
3. Shriram Ramanathan

Citations in the corpus

• Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, methodology): “Figure 11a shows the temperature dependency of the conductivity of a VO2 thermal sensor device (34).”