Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As

By T. Hayashi, Y. Hashimoto, Shingo Katsumotoa, Yasuhiro Iyea. 2001

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Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “The above mentioned detrimental effect of interstitials on the ferromagnetism of (Ga,Mn)As can be partly reduced by an annealing process (Chiba et al., 2003; Edmonds et al., 2002; Hayashi et al., 2001; Ku et al., 2003; Potashnik et al., 2001; Sørensen et al., 2003) that promotes the diffusion of the”
Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “…first successful growths of (In,Mn)As and (Ga,Mn)As ternary alloys with more than 1% Mn and to the discovery of ferromagnetism in these materials (Hayashi et al., 2001, 1997; Munekata et al., 1993; Ohno, 1998; Ohno et al., 1992, 1996; Shen et al., 1997; Shimizu et al., 1999; Van Esch et al.,…”
Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “…has progress in MBE growth and in the development of post-growth annealing techniques (Chiba et al., 2003a; Edmonds et al., 2002a; Eid et al., 2005; Hayashi et al., 2001; Ku et al., 2003; Yu et al., 2002) made it possible to suppress extrinsic effects, pushing Tc in (Ga,Mn)As up to 173 K…”
Semiconductor spintronics (2002, methodology): “These methods all produce almost the same[81].”