Charge distribution and screening in layered graphene systems

By Francisco Guinea. 2006

140 citations recorded by the source corpus.

The charge distribution induced by external fields in finite stacks of graphene planes, or in semi-infinite graphite is considered. The interlayer electronic hybridization is described by a nearest-neighbor hopping term, and the charge induced by the self-consistent electrostatic potential is calculated within the linear response theory (random phase approximation). The screening properties are determined by contributions from interband and intraband electronic transitions. In neutral systems, only interband transitions contribute to the charge polarizability, leading to insulatinglike screening properties, and to oscillations in the induced charge, with a period equal to the interlayer spacing. In doped systems, we find a screening length that is equivalent to two-to-three graphene layers, superimposed to significant charge oscillations.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/56372fa870a92dadcc50c4776f71a98b554d2e03

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

In Materials Chemistry

Citations in the corpus

Substrate-induced bandgap opening in epitaxial graphene. (2007, background): “Also, the strong dependence of ED on sample thickness is a direct manifestation of the short interlayer screening length (≈ 5 layers [23]) of graphene.”
The electronic properties of graphene (2007, background): “The hopping leads to coherence (Guinea, 2007).”
The role of contact resistance in graphene field-effect devices (2017, result): “6 nm in good accordance with previously reported data [100], and confirming a gate control limited to the first two-three layers.”