Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

By Changsik Kim, I. Moon, Daeyeong Lee, Min Sup Choi, Faisal Ahmed, S. Nam, Yeonchoo Cho, Hyeon-Jin Shin, Seongjun Park, Won Jong Yoo. ACS Nano, 2017

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Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor (2018, background): “It is for this very pinning effect that most metal-contacted MoS2 FETs typically show unipolar n-type behavior as the metal Fermi level gets pinned near the CBE of MoS2 irrespective of the metal work function [135,136,155,156].”
Electrical characterization of 2D materials-based field-effect transistors (2020, background): “Interfaces between 2D semiconductors andmetals are subject to Fermi level pinning due to the tunnel barrier at the interface, defect-induced interface states, and orbital overlap between adjacent heterogeneous materials, requiring precise characterization of the Schottky barrier and Fermi level pinn”