Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

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Charge Carrier Separation in Solar Cells (2015, background): “The awareness of the importance of surface recombination at the metal contacts has led to renewed interest in the development of “passivated contacts” [15].”
The Irresistible Charm of a Simple Current Flow Pattern – 25% with a Solar Cell Featuring a Full-Area Back Contact (2015, methodology): “Such oxides can be fabricated using wet-chemical [10] or UV/O3 growth [14].”
Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “[51], [52] or POLO (poly-Si on oxide) [53].”
Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions (2014, background): “Recently, very promising results have been shown on solar cells featuring an n-type poly-Si/n-type c-Si base contact and a “standard” p-type c-Si emitter [14,15].”
High-Efficiency n-Type HP mc Silicon Solar Cells (2017, methodology): “In this paper, we apply a high-efficiency solar cell fabrication process featuring a passivating rear side contact (TOPCon [10])”
Solar cell efficiency tables (Version 58) (2021, background): “more recently revitalised and developed to commercial readiness by the Fraunhofer Institute for Solar Energy Systems (FhG-ISE).(78) HJT (‘heterojunction’) cells have evolved from the HIT (‘heterojunction with intrinsic thin-layer’) cells originally developed by Sharp,(79) involving contacting each s”