Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

By U. Römer, Robby Peibst, T. Ohrdes, B. Lim, J. Krügener, E. Bugiel, T. Wietler, R. Brendel. 2014

226 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/07a13e00676cf2bbf1b8d216027265df2b01004a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. W. Kessels
2. Robby Peibst
3. L. Black
4. R. Brendel

In Electrical and Electronic Engineering

1. W. Kessels
2. R. Brendel
3. B. Macco
4. Jimmy Melskens
5. Robby Peibst
6. L. Black
7. S. Smit
8. B. V. D. Loo

In Materials Chemistry

1. W. Kessels

Citations in the corpus

• Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells (2015, methodology): “, [13]) requires further discussion, while”
• Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects (2018, background): “6 nm [64], it should be noted that tunneling becomes less likely in the case of thicker oxides, since”
• Contact Selectivity and Efficiency in Crystalline Silicon Photovoltaics (2016, unknown): “The process is similar to that reported in [17].”