A 0.65 THz Focal-Plane Array in a Quarter-Micron CMOS Process Technology
By Erik Öjefors, Ullrich R. Pfeiffer, A. Lisauskas, H. Roskos. IEEE Journal of Solid-State Circuits, 2009
428 citations recorded by the source corpus.
Subfields: Astronomy and Astrophysics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/54e20e508c2cbb00dcf0d88ee95424af0f40be98
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
Citations in the corpus
- CMOS Integrated Antenna-Coupled Field-Effect Transistors for the Detection of Radiation From 0.2 to 4.3 THz (2012, methodology): “The practical interest in MOSFET-based terahertz detectors and mixers strongly increased, after the first antenna-coupled MOSFET detectors and few-pixel focal plane arrays were implemented successfully for 645 GHz using a 250-nm CMOS foundry process, which did not need to be supplemented by addition”
- Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications (2009, methodology): “The performance of the receiver is comparable with conventional detectors of THz radiation [ 16 ] with the advantage of a low-cost and a multi-pixel integration capability offered by the CMOS technology.”
- THz Active Imaging Systems With Real-Time Capabilities (2011, background): “where each detector pixel contained an on-chip integrated antenna, a differential pair of FETs and an amplifier, with a commercial foundry process [70], [71], [73], [74].”
- A 1 k-Pixel Video Camera for 0.7–1.1 Terahertz Imaging Applications in 65-nm CMOS (2012, background): “It has, therefore, been solved numerically in [35] and results have been analyzed in comparison with the standard NQS model of the Process Design Kit (PDK), which was used for circuit simulations.”
- Review of Terahertz Tomography Techniques (2014, background): “This progress has occurred simultaneously with numerous efficient sources and detectors for continuous-wave (cw) terahertz radiation [32 – 34].”
- Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology (2011, background): “I. INTRODUCTION T HE RECENT advances in SiGe BiCMOS and CMOStechnologies have made it possible to build silicon-based heterodyne receivers [1] and square-law detectors [2] operating in the lower sub-millimeter-wave band.”